| PART |
Description |
Maker |
| H5TQ1G63EFRG7J H5TQ1G63EFRG7C H5TQ1G63EFRG7I H5TQ1 |
1Gb DDR3 SDRAM
|
Hynix Semiconductor
|
| 64M16 256M4 |
1Gb: x4, x8, x16 DDR3 SDRAM
|
Micon Design Technology Corporation
|
| K4B1G1646E |
1Gb E-die DDR3 SDRAM
|
Samsung
|
| K4B1G0446C-CF8 K4B1G0446C K4B1G0446C-ZCG9 K4B1G044 |
1Gb C-die DDR3 SDRAM Specification
|
Samsung semiconductor
http://
|
| EBE10EE8ACFA-6E-E EBE10EE8ACFA-8E-E EBE10EE8ACFA-8 |
128M X 72 DDR DRAM MODULE, 0.4 ns, DMA240 ROHS COMPLIANT, DIMM-240
1GB Unbuffered DDR2 SDRAM DIMM
|
Elpida Memory, Inc.
|
| HMT125R7AFP4C HMT125R7AFP8C HMT31GR7AMP4C HMT151R7 |
DDR3 SDRAM Registered DIMM Based on 1Gb A version
128M X 72 DDR DRAM MODULE, DMA240 ROHS COMPLIANT, RDIMM-240
512M X 72 DDR DRAM MODULE, DMA240
|
Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
|
| EBE10RD4ABFA |
1GB Registered DDR2 SDRAM DIMM (128M words x 72 bits, 1 Rank) 1GB的注册DDR2 SDRAM DIMM内存28M的字× 72位，1个等级）
|
Elpida Memory, Inc.
|
| EBE11UD8AGUA-5C-E EBE11UD8AGUA-6E-E |
1GB DDR2 SDRAM SO-DIMM
|
Elpida Memory
|
| HYM72V12C756BLS4-S HYM72V12C756BLS4-P HYM72V12C756 |
SDRAM - Registered DIMM 1GB
|
Hynix Semiconductor
|
| EBJ20UF8BCS0-DJ-F EBJ20UF8BCS0-GN-F |
2GB DDR3 SDRAM SO-DIMM
|
Elpida Memory
|
| EBJ21UE8BFU0-DJ-F EBJ21UE8BFU0-GL-F EBJ21UE8BFU0-G |
2GB DDR3 SDRAM SO-DIMM
|
Elpida Memory
|
